The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Aug. 30, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Tsuyoshi Araoka, Tsukuba, JP;
Youichi Makifuchi, Tachikawa, JP;
Takashi Tsutsumi, Matsumoto, JP;
Mitsuo Okamoto, Tsukuba, JP;
Kenji Fukuda, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, unknown;
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a front surface of the silicon carbide semiconductor substrate and including any one or a plurality of an oxide film, a nitride film, and an oxynitride film, and a gate electrode containing poly-silicon and provided on the gate insulating film. A concentration of fluorine in the gate insulating film at an interface with the silicon carbide semiconductor substrate is equal to or higher than 1×10atoms/cm.