The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jan. 08, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Youichi Makifuchi, Tsukuba, JP;
Takashi Tsutsumi, Tsukuba, JP;
Tsuyoshi Araoka, Tsukuba, JP;
Mitsuo Okamoto, Tsukuba, JP;
Kenji Fukuda, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
Abstract
On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes Hand HO without including O. As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized.