The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Aug. 27, 2010
Takahiro Nagano, Tsukuba, JP;
Mitsuo Okamoto, Tsukuba, JP;
Tsutomu Yatsuo, Tsukuba, JP;
Kenji Fukuda, Tsukuba, JP;
Takahiro Nagano, Tsukuba, JP;
Mitsuo Okamoto, Tsukuba, JP;
Tsutomu Yatsuo, Tsukuba, JP;
Kenji Fukuda, Tsukuba, JP;
Abstract
A SiC MISFET, in which a source region and a drain region () are formed in a one-conductivity-type SiC semiconductor region (), in which a recess () with a predetermined depth is formed in a portion of the SiC semiconductor region sandwiched between the source and drain regions, with the recess having two side faces in contact with the source and drain regions, and a bottom face connecting the two side faces, and in which portions () of the source and drain regions adjacent to the vicinity of both ends of the bottom face of the recess are thinner than other portions.