The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Oct. 03, 2003
Shinsuke Harada, Ibaraki, JP;
Tsutomu Yatsuo, Ibaraki, JP;
Kenji Fukuda, Ibaraki, JP;
Mitsuo Okamoto, Ibaraki, JP;
Kazuhiro Adachi, Ibaraki, JP;
Seiji Suzuki, Osaka, JP;
Shinsuke Harada, Ibaraki, JP;
Tsutomu Yatsuo, Ibaraki, JP;
Kenji Fukuda, Ibaraki, JP;
Mitsuo Okamoto, Ibaraki, JP;
Kazuhiro Adachi, Ibaraki, JP;
Seiji Suzuki, Osaka, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Abstract
A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage. A first deposition film of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate of a first conductivity type. Formed on the first deposition film is a second deposition film that includes a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film is formed on the second deposition film, which includes a second region that is wider than the selectively removed first region, a high concentration source region of a first conductivity type, and a low concentration gate region of a second conductivity type. A low concentration base region of a first conductivity type is formed in contact with the first deposition film in the first and second regions.