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For the Inventor, By the Inventor

Nirasaki, Japan

Mitsuaki Iwashita

USPTO Granted Patents = 57 


Average Co-Inventor Count = 3.8

ph-index = 6

Forward Citations = 192(Granted Patents)

Forward Citations (Not Self Cited) = 187(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yamanashi, JP (2010 - 2019)
  • Koshi, JP (2019 - 2021)
  • Kumamoto, JP (2021)
  • Nirasaki, JP (1997 - 2024)

Company Filing History:

goldMedal56 out of 10,341 
 
Tokyo Electron Limited
 patents
silverMedal2 out of 52,751 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal1 out of 1 
 
Ipec-planar
 patent
4. 1 out of 13 
 
Toyko Electron Limited
 patents
5. 1 out of 2,955 
 
Toshiba Memory Corporation
 patents
6. 1 out of 40 
 
A School Corporation Kansai University
 patents
where one patent can have more than one assignee

Years Active: 1997-2025

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Areas of Expertise:
Ionic Liquid Crystal Structures
Semiconductor Manufacturing
Plating Methods
Substrate Processing
Electrocaloric Effect Devices
Micro Pattern Formation
Supercritical Drying
Catalyst Layer Formation
Liquid Treatment Apparatus
Hard Mask Formation
Wiring Structure Manufacturing
Patterning Techniques
57 patents (USPTO):Explore Patents
1. 12444606 - Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate (2025-10-14),
2. 12435426 - Substrate liquid processing apparatus and substrate liquid processing method (2025-10-07),
3. 12417928 - Substrate processing method and substrate processing system (2025-09-16),
4. 12406862 - Vacuum processing apparatus and oxidizing gas removal method (2025-09-02),
5. 12276027 - Substrate processing apparatus and substrate processing method (2025-04-14),
6. 12247768 - Electrocaloric effect element, heat transfer device, semiconductor manufacturing device, and electrocaloric effect element control method (2025-03-11),
7. 12011738 - Substrate processing method and ionic liquid (2024-06-18),
8. 11171050 - Method for manufacturing a contact pad, method for manufacturing a semiconductor device using same, and semiconductor device (2021-11-09),
9. 11004684 - Forming method of hard mask (2021-05-11),
10. 10224208 - Plating method and recording medium (2019-03-05),
11. 10224202 - Forming method of hard mask, forming apparatus of hard mask and recording medium (2019-03-05),
12. 10199240 - Substrate processing method, substrate processing apparatus, and storage medium (2019-02-05),
13. 10138556 - Plating method, plating apparatus, and storage medium (2018-11-27),
14. 10030308 - Plating method, plating system and storage medium (2018-07-24),
15. 9966306 - Catalyst layer forming method, catalyst layer forming system and recording medium (2018-05-08),

Title: Mitsuaki Iwashita - Innovative Inventor from Nirasaki, Japan

Introduction: Mitsuaki Iwashita is a renowned inventor hailing from Nirasaki, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Mitsuaki Iwashita holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Mitsuaki Iwashita has worked with leading research institutions and tech companies, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Mitsuaki Iwashita has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Mitsuaki Iwashita's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and engineers worldwide.

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