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For the Inventor, By the Inventor

Nirasaki, Japan

Mitsuaki Iwashita

This inventor holds 59 USPTO granted patents and 28 published patent applications and 1 EPO patent, primarily in Semiconductor Processing (CPC class C23C). Top assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba, Ipec-Planar. Active years: 1997-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuaki Iwashita. Retrieved from https://idiyas.com/inventor/mitsuaki-iwashita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 59 

% Patents Active = 84.7


Average Co-Inventor Count = 3.8

ph-index = 6

Forward Citations = 198(Granted Patents)

Forward Citations (Not Self Cited) = 187(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yamanashi, JP (2010 - 2019)
  • Koshi, JP (2019 - 2021)
  • Kumamoto, JP (2021)
  • Nirasaki, JP (1997 - 2024)

Company Filing History:

goldMedal58 out of 10,933 
 
Tokyo Electron Limited
 patents
silverMedal2 out of 53,286 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal1 out of 1 
 
Ipec-Planar
 patent
4. 1 out of 99 
 
Kansai University
 patents
5. 1 out of 2,955 
 
Toshiba Memory Corporation
 patents
6. 1 out of 13 
 
Toyko Electron Limited
 patents
where one patent can have more than one assignee

Years Active: 1997-2026

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Areas of Expertise:
Ionic Liquid Crystal
Substrate Processing
Plating Method
Electrocaloric Effect
Heat Transfer Device
Semiconductor Manufacturing
Metal Wiring Layer
Supercritical Drying
Catalyst Layer
Hard Mask
Liquid Treatment
Micro Pattern Forming
59 patents (USPTO):Explore Patents
1. 12680169 - Substrate liquid processing method and substrate liquid processing apparatus (2026-07-14),
2. 12643058 - Purification processing apparatus, substrate processing system, and processing method (2026-06-02),
3. 12444606 - Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate (2025-10-14),
4. 12435426 - Substrate liquid processing apparatus and substrate liquid processing method (2025-10-07),
5. 12417928 - Substrate processing method and substrate processing system (2025-09-16),
6. 12406862 - Vacuum processing apparatus and oxidizing gas removal method (2025-09-02),
7. 12276027 - Substrate processing apparatus and substrate processing method (2025-04-14),
8. 12247768 - Electrocaloric effect element, heat transfer device, semiconductor manufacturing device, and electrocaloric effect element control method (2025-03-11),
9. 12011738 - Substrate processing method and ionic liquid (2024-06-18),
10. 11171050 - Method for manufacturing a contact pad, method for manufacturing a semiconductor device using same, and semiconductor device (2021-11-09),
11. 11004684 - Forming method of hard mask (2021-05-11),
12. 10224208 - Plating method and recording medium (2019-03-05),
13. 10224202 - Forming method of hard mask, forming apparatus of hard mask and recording medium (2019-03-05),
14. 10199240 - Substrate processing method, substrate processing apparatus, and storage medium (2019-02-05),
15. 10138556 - Plating method, plating apparatus, and storage medium (2018-11-27),

Title: Mitsuaki Iwashita - Innovative Inventor from Nirasaki, Japan

Introduction: Mitsuaki Iwashita is a renowned inventor hailing from Nirasaki, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Mitsuaki Iwashita holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Mitsuaki Iwashita has worked with leading research institutions and tech companies, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Mitsuaki Iwashita has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Mitsuaki Iwashita's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and engineers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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