The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Nov. 09, 2023
Tokyo Electron Limited, Tokyo, JP;
Dipak Aryal, Austin, TX (US);
Antonio Luis Pacheco Rotondaro, Austin, TX (US);
Takeo Nakano, Nirasaki, JP;
Mitsuaki Iwashita, Nirasaki, JP;
Ryuichi Asako, Nirasaki, JP;
Tamotsu Morimoto, Nirasaki, JP;
Paul Abel, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Embodiments of improved methods and processes are provided for patterning a semiconductor substrate using direct self-assembly (DSA) of ionic liquid crystals (ILCs). In the disclosed embodiments, an ILC solution comprising ILCs is deposited on a variety of substrate surfaces. An upper surface of the ILC solution is exposed to a gas phase, non-polar solvent (such as, e.g., hexane gas). The gas phase, non-polar solvent provides an ambient environment that promotes self-assembly of the ILCs into vertically layered ILC structures.