Paul Abel

Title: Paul Abel: Innovator in Atomic Layer Etching

Introduction

Paul Abel is a prominent inventor based in Austin, TX, known for his significant contributions to the field of atomic layer etching. With a total of 15 patents to his name, he has made remarkable advancements in the methods and processes used in semiconductor manufacturing.

Latest Patents

Among his latest patents, Abel has developed innovative methods for wet atomic layer etching of molybdenum. These systems and methods utilize various techniques and wet etch chemistries to oxidize a molybdenum surface, forming a self-limiting molybdenum oxide passivation layer. The methods include ultra-violet (UV) photolysis of peroxide oxidizers to create oxidizing radicals, steric hindrance of large reactant molecules for better oxidation behavior, and ligand-assisted oxidation to modify the surface chemistry of the passivation layer. After forming the passivation layer, it can be selectively removed in a dissolution step to etch the molybdenum surface effectively. Additionally, he has introduced a hybrid atomic layer etching process that combines gas-phase surface modification with liquid-phase dissolution, allowing for precise control over the etching of materials on substrates.

Career Highlights

Throughout his career, Paul Abel has worked with notable organizations, including Tokyo Electron Limited and the University of Texas System. His experience in these institutions has allowed him to refine his expertise in semiconductor technologies and contribute to groundbreaking research in the field.

Collaborations

Abel has collaborated with esteemed colleagues such as Jacques Faguet and Omid Zandi, further enhancing the impact of his work in atomic layer etching.

Conclusion

Paul Abel's innovative approaches to atomic layer etching have positioned him as a key figure in the semiconductor industry. His patents and collaborative efforts continue to influence advancements in technology and manufacturing processes.