The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Apr. 20, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Christopher Netzband, Albany, NY (US);
Paul Abel, Austin, TX (US);
Jacques Faguet, Austin, TX (US);
Arkalgud Sitaram, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/18 (2006.01); H01L 21/306 (2006.01); C23G 1/10 (2006.01); H01L 21/3213 (2006.01); C23F 1/34 (2006.01); C23G 5/028 (2006.01);
U.S. Cl.
CPC ...
C23F 1/18 (2013.01); C23F 1/34 (2013.01); C23G 1/103 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01); C23G 5/02867 (2013.01);
Abstract
The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.