The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Jun. 13, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Omid Zandi, Austin, TX (US);

Paul Abel, Austin, TX (US);

Mengistie Debasu, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23G 1/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); C23G 1/10 (2013.01);
Abstract

The present disclosure provides new processes and methods to pre-treat metal surfaces in the back end of line (BEOL) fabrication of integrated circuits (ICs). More specifically, the present disclosure provides selective, self-limiting processes and methods for stripping native oxide surface layers that may form on exposed metal surfaces during processing of ICs. The processes and methods disclosed herein utilize the fundamental concepts of metal complexation to provide a novel solution, which enables native oxide surface layers to be selectively removed from exposed metal films in a self-limiting manner. In particular, the disclosed processes and methods use complexing agents (e.g., ligands) to selectively dissolve native oxide surface layers, without significantly etching or removing the underlying metal film.


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