Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

A School Corporation Kansai University

Toyko Electron Limited

Ipec-planar

Mitsuaki Iwashita

Takashi Tanaka

Nobutaka Mizutani

Takayuki Toshima

Yuichiro Inatomi

Yusuke Saito

Kazuyuki Mitsuoka

Takehiko Orii

Hiroki Ohno

Ryuichi Asako

Nobuo Konishi

Kazutoshi Iwai

Hiroshi Tomita

Kazuhide Hasebe

Yohei Sato

Hisashi Okuchi

Shigeru Nakajima

Pao-Hwa Chou

Hirokazu Ueda

Reiji Niino

Hidekazu Hayashi

Gen You

Takeo Nakano

Koichi Yatsuda

Kenichi Hara

Naoki Umeshita

Takeshi Nagao

Minoru Honda

Koji Akiyama

Takashi Hayakawa

Linan Ji

Tadashi Onishi

Dipak Aryal

Satoshi Kaneko

Masami Akimoto

Yuji Kamikawa

Hidekazu Okamoto

Kenji Sekiguchi

Makoto Muramatsu

Katsuhiro Morikawa

Satoru Shimura

Masahito Sugiura

Mikio Nakashima

Paul Abel

Toshiharu Nishimura

Tamotsu Morimoto

Hiroyuki Nagai

Keiji Tanouchi

Kazuyoshi Matsuzaki

Ikuo Sawada

Yoji Iizuka

Tetsu Kawasaki

Antonio Luis Pacheco Rotondaro

Yasushi Akasaka

Shigeru Kawamura

Manabu Hama

Yukiko Kitajima

Hideo Namatsu

Antonio Rotondaro

Atsushi Hosaka

Kenichi Uki

Shoso Shinguhara

Kohei Ota

Gary Cohrt

Gerald A Krulik

Mizue Munakata

Embodiments of improved methods and processes are provided for patterning a semiconductor substrate using direct self-assembly (DSA) of ionic liquid crystals (ILCs). In the disclosed embodiments, an ILC solution comprising ILCs is deposited on a variety of substrate surfaces. An upper surface of the ILC solution is exposed to a gas phase, non-polar solvent (such as, e.g., hexane gas). The gas phase, non-polar solvent provides an ambient environment that promotes self-assembly of the ILCs into vertically layered ILC structures.

Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate

A technique advantageous for shortening time required for electroless plating that is performed on a substrate is provided. A substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a reaction acceleration unit, configured to accelerate a plating reaction of an unused electroless plating solution, including an activation unit configured to accelerate the electroless plating solution with respect to the plating reaction and a reaction heater configured to heat the electroless plating solution; and a plating solution supply configured to supply the electroless plating solution to the substrate held by the substrate holder.

Substrate liquid processing apparatus and substrate liquid processing method

A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.

Substrate processing method and substrate processing system

A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Vacuum processing apparatus and oxidizing gas removal method

A substrate processing apparatus includes a liquid processing module, provided with a carry-out/in opening of a substrate, including therein a first liquid processing device and a second liquid processing device; a module-outside transfer device configured to carry the substrate out from and into the liquid processing module; and a module-inside transfer device configured to transfer the substrate between the first liquid processing device and the second liquid processing device. The first liquid processing device is equipped with a first holder configured to hold the substrate. The second liquid processing device is equipped with a second holder configured to hold the substrate. The second liquid processing device is configured to perform a plating processing on the substrate held by the second holder. The first liquid processing device is configured to perform at least a post-cleaning processing performed after the plating processing on the substrate held by the first holder.

Substrate processing apparatus and substrate processing method

An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

Electrocaloric effect element, heat transfer device, semiconductor manufacturing device, and electrocaloric effect element control method

A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.

Substrate processing method and ionic liquid

A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.

Method for manufacturing a contact pad, method for manufacturing a semiconductor device using same, and semiconductor device

A catalyst is imparted selectively to a plateable material portionby performing a catalyst imparting processing on a substrate W having a non-plateable material portionand the plateable material portionformed on a surface thereof. Then, a hard mask layeris formed selectively on the plateable material portionby performing a plating processing on the substrate W. The non-plateable material portionis made of SiOas a main component, and the plateable material portionis made of a material including, as a main component, a material containing at least one of a OCHgroup and a NHgroup, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Forming method of hard mask

Forming method of hard mask, forming apparatus of hard mask and recording medium

An electroless plating process is performed on an Al layer, which is made of aluminum or an aluminum alloy, with an electroless plating liquid which is alkaline and contains a complexing agent. A plating method includes preparing a substratehaving a surface (for example, bottom surface of TSV) at which an Al layermade of aluminum or an aluminum alloy is exposed; forming a zincate filmon a surface of the Al layer by performing a zincate treatment on the substrate; and forming a first electroless plating layer (for example, Co barrier layer) on the surface of the Al layer with an electroless plating liquid (for example, Co-based plating liquid) which is alkaline and contains a complexing agent.

Plating method and recording medium

A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

Substrate processing method, substrate processing apparatus, and storage medium

A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. The plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process. Further, a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid.

Plating method, plating apparatus, and storage medium

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layerserving as a barrier film on a substrate; baking the first plating layer; forming a second plating layerserving as a barrier film; and baking the second plating layer. A plating layer stacked bodyserving as a barrier film is formed of the first plating layerand the second plating layer

Plating method, plating system and storage medium

A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layerby supplying a catalyst solutiononto a substratehaving a recessto adsorb the catalystA onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrateand an inside of the recessby supplying a rinse liquid; drying the surface of the substrateand the inside of the recess. Further, by supplying a binder solutioncontaining a binderB onto the substrate, the catalystA on the surface of the substrateis bound to the substrateby the binderB.

Catalyst layer forming method, catalyst layer forming system and recording medium

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Nirasaki, Japan

Mitsuaki Iwashita