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For the Inventor, By the Inventor

Clinton Corners, NY, United States of America

Michael John Hargrove

USPTO Granted Patents = 56 


Average Co-Inventor Count = 3.1

ph-index = 13

Forward Citations = 702(Granted Patents)

DiyaCoin DiyaCoin = 0.45 


Inventors with similar research interests:


Location History:

  • Clinton Corners, NJ (US) (2013)
  • Clinton Corners, NY (US) (1998 - 2016)

Company Filing History:

goldMedal28 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal16 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal8 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
4. 6 out of 33,404 
 
Seiko Epson Corporation
 patents
where one patent can have more than one assignee

Years Active: 1998-2016

where 'Filed Patents' based on already Granted Patents

56 patents (USPTO):
1. 9530864 - Junction overlap control in a semiconductor device using a sacrificial spacer layer (2016-12-27),
2. 9472554 - Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage (2016-10-18),
3. 9437740 - Epitaxially forming a set of fins in a semiconductor device (2016-09-06),
4. 9373721 - Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices (2016-06-21),
5. 9343300 - Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region (2016-05-17),
6. 9318342 - Methods of removing fins for finfet semiconductor devices (2016-04-19),
7. 9312387 - Methods of forming FinFET devices with alternative channel materials (2016-04-12),
8. 9236258 - Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices (2016-01-12),
9. 9147730 - Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process (2015-09-29),
10. 9142674 - FINFET devices having a body contact and methods of forming the same (2015-09-22),
11. 9099492 - Methods of forming replacement gate structures with a recessed channel (2015-08-04),
12. 9034737 - Epitaxially forming a set of fins in a semiconductor device (2015-05-19),
13. 8987078 - Metal semiconductor alloy contact with low resistance (2015-03-24),
14. 8809178 - Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents (2014-08-19),
15. 8716828 - Semiconductor device with isolation trench liner (2014-05-06),

Title: **Innovative Contributions of Michael John Hargrove in Semiconductor Technology**

Introduction

Michael John Hargrove, based in Clinton Corners, NY, is a prolific inventor with an impressive portfolio of 56 patents to his name. His work primarily focuses on advancements in semiconductor technology, reflecting his commitment to innovation and excellence in the field.

Latest Patents

Hargrove's latest patents include groundbreaking innovations such as "Junction overlap control in a semiconductor device using a sacrificial spacer layer." This invention provides approaches for managing junction overlap in semiconductor devices, allowing for the creation of highly scaled advanced transistors with precisely defined junction profiles. Another significant patent is related to "Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage." This specification outlines the fabrication methods of integrated circuits featuring FinFET technology, enhancing the performance and reliability of these devices.

Career Highlights

Throughout his career, Michael Hargrove has collaborated with leading technology companies, including Globalfoundries Inc. and International Business Machines Corporation (IBM). His work in these institutions has contributed significantly to the advancement of semiconductor technologies, further solidifying his reputation as an expert in the field.

Collaborations

In his journey of innovation, Hargrove has had the privilege of working alongside esteemed colleagues like Rohit Pal and Frank Bin Yang. Their collaborations have fostered an environment of innovation that encourages the sharing of ideas and expertise, resulting in groundbreaking advancements in semiconductor technology.

Conclusion

Michael John Hargrove stands out as a remarkable inventor whose contributions have greatly influenced the semiconductor industry. With a continued focus on innovation and collaboration, he is poised to make further advancements that will shape the future of technology.

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