The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Mar. 26, 2012
Applicants:

Kuldeep Amarnath, San Jose, CA (US);

Michael Hargrove, Clinton Corners, NY (US);

Srikanth Samavedam, Fishkill, NY (US);

Inventors:

Kuldeep Amarnath, San Jose, CA (US);

Michael Hargrove, Clinton Corners, NY (US);

Srikanth Samavedam, Fishkill, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66621 (2013.01); H01L 29/7848 (2013.01); H01L 29/66636 (2013.01);
Abstract

Disclosed herein are various methods of forming replacement gate structures with a recessed channel region. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define an initial gate opening having sidewalls and to expose a surface of the substrate and performing an etching process on the exposed surface of the substrate to define a recessed channel in the substrate. The method includes the additional steps of forming a sidewall spacer within the initial gate opening on the sidewalls of the initial gate opening to thereby define a final gate opening and forming a replacement gate structure in the final gate opening.


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