logo

For the Inventor, By the Inventor

Shanghai, China

Meng Zhao

This inventor holds 25 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing (Beijing) International Corporation. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Meng Zhao. Retrieved from https://idiyas.com/inventor/meng-zhao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:

goldMedal24 out of 1,756 
 
Semiconductor Manufacturing International (Shanghai) Corporation
 patents
silverMedal13 out of 950 
 
Semiconductor Manufacturing International (Beijing) Corporation
 patents
bronzeMedal1 out of 54 
 
Semiconductor Manufacturing (Beijing) International Corporation
 patents
4. 1 out of 54 
 
Semiconductor Manufacturing (Shanghai) International Corporation
 patents
where one patent can have more than one assignee

Years Active: 2014-2023

Loading Chart...
Areas of Expertise:
Semiconductor Structure
FinFET Structure
PMOS Transistor
LDMOS Transistor
Low Contact Resistance
STI Structure
MOS Transistor
Fabrication Method
Transistor Device
Electronic Device
Stress Layer
Barrier Layers
25 patents (USPTO):Explore Patents
1. 11710791 - Semiconductor structure with inversion layer between stress layer and protection layer and fabrication method thereof (2023-07-25),
2. 11695035 - Semiconductor structure and fabrication method thereof (2023-07-04),
3. 11508848 - Semiconductor device and method for manufacturing the same (2022-11-22),
4. 11282924 - Semiconductor device, related manufacturing method, and related electronic device (2022-03-22),
5. 10985276 - Method and device having low contact resistance (2021-04-20),
6. 10861976 - Semiconductor device and method for manufacturing the same (2020-12-08),
7. 10777660 - Semiconductor structure (2020-09-15),
8. 10580898 - Semiconductor device and method for manufacturing same (2020-03-03),
9. 10522685 - Semiconductor device and method for manufacturing the same (2019-12-31),
10. 10497807 - PMOS transistor and fabrication method thereof (2019-12-03),
11. 10446684 - Method and device having low contact resistance (2019-10-15),
12. 10418461 - Semiconductor structure with barrier layers (2019-09-17),
13. 10361283 - MOS transistor and fabrication method (2019-07-23),
14. 10347747 - Semiconductor structure and fabrication method thereof (2019-07-09),
15. 10211289 - Semiconductor device, related manufacturing method, and related electronic device (2019-02-19),

Title: The Innovative Journey of Meng Zhao from Shanghai

Introduction: Meng Zhao, a pioneering inventor hailing from Shanghai, China, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Meng Zhao's latest patents include cutting-edge technologies in artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Meng Zhao has established himself as a leading figure in the tech industry, with numerous patents to his name and a reputation for pushing the boundaries of what is possible.

Collaborations: Throughout his career, Meng Zhao has collaborated with top research institutions, universities, and tech companies worldwide, fostering a culture of innovation and knowledge-sharing that has led to groundbreaking discoveries.

Conclusion: Meng Zhao's relentless pursuit of innovation and his passion for creating a better future through technology make him a true visionary in the world of inventions. His impact on the industry is profound, and his legacy is sure to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…