The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Mar. 25, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Meng Zhao, Shanghai, CN;
Abstract
A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes a substrate and a dummy gate structure on the substrate. The substrate contains source-drain openings on both sides of the dummy gate structure. The semiconductor structure also includes a first stress layer formed on a sidewall of a source-drain opening of the source-drain openings. Further, the semiconductor structure includes a second stress layer formed at a bottom of the source-drain opening and on the first stress layer. The second stress layer fully fills the source-drain opening, and stress of the first stress layer is less than stress of the second stress layer.