The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

May. 21, 2019
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventor:

Meng Zhao, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/2658 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 29/0653 (2013.01); H01L 29/1037 (2013.01); H01L 29/66659 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01);
Abstract

The present disclosure provides semiconductor structures. An exemplary semiconductor structure includes a substrate having a first region and a second region; an isolation structure formed in the substrate in the first region; a compensation doping region formed in the substrate in the first region, locate at a side of the isolation structure adjacent to the substrate in the second region and connecting with the isolation structure; a well region formed in the substrate in the second region; a drift region formed in the substrate in the first region and enclosing the isolation structure and the compensation doping region; a gate structure formed over the substrate in a boundary region between the first region and the second region; a source region formed in the well region at one side of the gate structure; and a drain region formed in the drift region at another side of the gate structure.


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