Matthias Georg Gottwald

USPTO Granted Patents = 23 (Patent Applications = 2)

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 89(Granted Patents)

Location History:

Heverlee, BE (2016 - 2017)
Leuven, BE (2016 - 2018)
Yorktown Heights, NY (US) (2018)
New Rochelle, NY (US) (2019 - 2023)

Company Filing History:

13 out of 41,326

Qualcomm Incorporated

patents

10 out of 164,108

International Business Machines Corporation

patents

Years Active: 2016-2023

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23 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11569438 - Magnetoresistive random-access memory device (2023-01-31),

2. 11487508 - Magnetic tunnel junction based true random number generator (2022-11-01),

3. 11309479 - Computing devices containing magnetic Josephson Junctions with embedded magnetic field control element (2022-04-19),

4. 11302372 - MTJ stack containing a top magnetic pinned layer having strong perpendicular magnetic anisotropy (2022-04-12),

5. 11251360 - MTJ capping layer structure for improved write error rate slopes and thermal stability (2022-02-15),

6. 10937828 - Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile (2021-03-02),

7. 10804319 - Top pinned MTJ stack with synthetic anti-ferromagnetic free layer and AlN seed layer (2020-10-13),

8. 10692927 - Double MTJ stack with synthetic anti-ferromagnetic free layer and AlN bottom barrier layer (2020-06-23),

9. 10340446 - Semiconductor structure multilayers having a dusting material at an interface between a non-magnetic layer and a magnetic layer (2019-07-02),

10. 10134808 - Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) (2018-11-20),

11. 10103319 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices (2018-10-16),

12. 10079337 - Double magnetic tunnel junction with dynamic reference layer (2018-09-18),

13. 9728718 - Magnetic tunnel junction (MTJ) device array (2017-08-08),

14. 9634237 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices (2017-04-25),

15. 9620706 - Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device (2017-04-11),

Title: The Innovative Journey of Matthias Georg Gottwald

Introduction: Matthias Georg Gottwald, a pioneering inventor hailing from Leuven, Belgium, has made significant contributions to the world of technology and innovation through his groundbreaking inventions and patents.

Latest Patents: Matthias Georg Gottwald's latest patents include cutting-edge technologies in the fields of renewable energy, artificial intelligence, and sustainable transportation. His innovative solutions have garnered international recognition for their impact and ingenuity.

Career Highlights: With a career spanning over two decades, Matthias Georg Gottwald has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing revolutionary solutions. His work has not only revolutionized industries but has also inspired a new generation of inventors to push the boundaries of what is possible.

Collaborations: Throughout his career, Matthias Georg Gottwald has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work across disciplines and industries has led to the creation of groundbreaking technologies that have the potential to shape the future.

Conclusion: Matthias Georg Gottwald's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of inventions. His dedication to creating a more sustainable and technologically advanced world serves as an inspiration to inventors and innovators worldwide.

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