The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Feb. 15, 2019
International Business Machines Corporation, Armonk, NY (US);
Matthias G. Gottwald, New Rochelle, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A top pinned magnetic tunnel junction (MTJ) stack for use in spin-transfer torque magnetoresistive random access memory (STT MRAM) is provided. The top pinned MTJ stack contains a synthetic anti-ferromagnetic magnetic free layer stack that is formed on an insulating aluminum nitride (AlN) seed layer having hexagonal symmetry. For such a top pinned MTJ stack, the symmetry requirements for the tunnel barrier layer do not conflict anymore with the symmetry requirements for strong anti-ferromagnetic exchange. Further, and compared to using only a metallic seed, the insulating AlN seed layer limits spin pumping from the magnetic free layer into the metallic seed layer and therefore lowers the switching current, while only making a small contribution to the resistance of a STT MRAM.