The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10079337 B1

Date of Patent:

Sep. 18, 2018

Filed:

Jan. 11, 2017

Double magnetic tunnel junction with dynamic reference layer

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Matthias G. Gottwald, Yorktown Heights, NY (US);

Guohan Hu, Yorktown Heights, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Nikolay Yushin

Int. Cl.

CPC ...

H01L 27/00 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);

U.S. Cl.

CPC ...

H01L 43/02 (2013.01); H01L 27/222 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);

Abstract

A double magnetic tunnel junction (DMTJ) device includes a fixed reference layer of a first magnetic material having a perpendicular magnetic anisotropy with a magnetic moment that is fixed. The device also includes a free layer of a second magnetic material having a perpendicular magnetic anisotropy with a magnetic moment that is changeable based on a current. A dynamic reference layer of a third magnetic material has an in-plane magnetic anisotropy and a changeable magnetic moment. The free layer is disposed between the fixed reference layer and the dynamic reference layer.

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