The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Feb. 06, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventor:

Matthias Georg Gottwald, New Rochelle, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 27/222 (2013.01);
Abstract

A magnetic tunnel junction (MTJ) stack structure having an enhanced write performance and thermal stability (i.e., retention) is provided which can be used as an element/component of a spin-transfer torque (STT) MRAM device. The improved write performance, particularly the write error rate slope as a function of write voltage (Vfrc) which is essential in defining the overdrive voltage needed to successfully write a bit at low write error floors, is provided by a MTJ stack structure in which a zirconium (Zr) cap layer is inserted between a MTJ capping layer and an etch stop layer.


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