The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Feb. 07, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Seonghoon Woo, New York, NY (US);

Matthias Georg Gottwald, New Rochelle, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.


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