The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Mar. 23, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Matthias Georg Gottwald, New Rochelle, NY (US);

Pouya Hashemi, Purchase, NY (US);

Bruce B. Doris, Slingerlands, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A method of manufacturing a magnetic tunnel junction device is provided. The method includes forming an MTJ stack including a reference layer, a tunnel barrier layer formed on the reference layer, a free layer formed on the barrier layer, and a cap layer formed on the free layer. The method also includes performing ion beam etching (IBE) through each layer of the MTJ stack to form at least one MTJ pillar. The method also includes forming an isolation layer on sidewalls of at least the tunnel barrier layer, the isolation layer comprising a same material as that of the tunnel barrier layer. A combined width of the isolation layer and the tunnel barrier layer is equal to or greater than a width of at least one of the reference layer and the free layer.


Find Patent Forward Citations

Loading…