The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Feb. 15, 2019
International Business Machines Corporation, Armonk, NY (US);
Matthias G. Gottwald, New Rochelle, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A double magnetic tunnel junction (MTJ) stack for use in spin-transfer torque magnetoresistive random access memory (STT MRAM) is provided. The double MTJ stack includes a bottom tunnel barrier layer having hexagonal symmetry and composed of AlN, a magnetic free layer stack containing a synthetic anti-ferromagnetic coupling layer, and a top tunnel barrier layer having cubic symmetry. For such a double MTJ stack, the symmetry requirements for the tunnel barrier layers do not conflict anymore with the symmetry requirements for strong anti-ferromagnetic exchange. Thus, such a double MTJ stack can be used to provide performance enhancement such as faster switching times and lower write errors to a STT MRAM.