Kanagawa, Japan

Masayuki Shimuta

USPTO Granted Patents = 17 

Average Co-Inventor Count = 5.1

ph-index = 3

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2013-2017

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17 patents (USPTO):Explore Patents

Title: Masayuki Shimuta: Innovator in Memory Device Technologies

Introduction

Masayuki Shimuta, a prominent inventor based in Kanagawa, Japan, has made significant contributions to the field of memory device technology. With a total of 17 patents to his name, Shimuta's inventive prowess has helped in the advancement of electronic devices, impacting industries worldwide.

Latest Patents

Among his most recent inventions are a series of innovative patents focused on memory components and their operational methods. One of his notable patents describes a memory component featuring first and second electrodes with a memory layer in between. This memory layer consists of two distinct layers, one containing aluminum and tellurium, and another made of aluminum oxide, which is enhanced with a transition metal oxide. Furthermore, Shimuta has developed a method for creating memory elements that includes an ion source layer structured with multiple unit layers optimized for performance.

Career Highlights

Masayuki Shimuta has held influential positions in notable companies such as Sony Corporation and Sony Semiconductor Solutions Corporation. His work at these firms has significantly contributed to the development of cutting-edge memory technologies.

Collaborations

Throughout his career, Shimuta has collaborated with talented individuals, including his coworkers Shuichiro Yasuda and Kazuhiro Ohba. These partnerships have fostered an environment of creativity and innovation, driving the evolution of memory devices.

Conclusion

Masayuki Shimuta's contributions to memory technology through his extensive patent portfolio exemplify his dedication to innovation. His work continues to influence the future of electronic memory solutions, cementing his place as a leading inventor in this essential field.

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