The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Dec. 05, 2011
Hiroaki Sei, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Katsuhisa Aratani, Kanagawa, JP;
Akira Kouchiyama, Kanagawa, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Kazuhiro Ohba, Tokyo, JP;
Hiroaki Sei, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Katsuhisa Aratani, Kanagawa, JP;
Akira Kouchiyama, Kanagawa, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Kazuhiro Ohba, Tokyo, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.