The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Mar. 09, 2012
Kazuhiro Ohba, Miyagi, JP;
Takeyuki Sone, Miyagi, JP;
Masayuki Shimuta, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Kazuhiro Ohba, Miyagi, JP;
Takeyuki Sone, Miyagi, JP;
Masayuki Shimuta, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
There are provided a memory element and a memory device with improved writing and erasing characteristics during operations at a low voltage and a low current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer, and the barrier layer containing a transition metal or a nitride thereof.