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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9543514 B1

PDFFull Text
Expired
Date of Patent:
Jan. 10, 2017

Filed:

Nov. 24, 2015

Memory component, memory device, and method of operating memory device

Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kazuhiro Ohba, Miyagi, JP;

Shuichiro Yasuda, Kanagawa, JP;

Tetsuya Mizuguchi, Kanagawa, JP;

Katsuhisa Aratani, Kanagawa, JP;

Masayuki Shimuta, Kanagawa, JP;

Akira Kouchiyama, Kanagawa, JP;

Mayumi Ogasawara, Miyagai, JP;

Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Tokyo, JP;

Attorney:

Dentons US LLP

Primary Examiner:

Michael Tran

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); G11C 11/16 (2013.01); G11C 13/0011 (2013.01); H01L 27/2436 (2013.01); H01L 27/2472 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/1633 (2013.01);
Abstract

A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.

Find Patent Forward Citations

Ohba, Kazuhiro. (2017). Memory component, memory device, and method of operating memory device (U.S. Patent No. 9543514). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9543514

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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