The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Nov. 24, 2015
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kazuhiro Ohba, Miyagi, JP;

Shuichiro Yasuda, Kanagawa, JP;

Tetsuya Mizuguchi, Kanagawa, JP;

Katsuhisa Aratani, Kanagawa, JP;

Masayuki Shimuta, Kanagawa, JP;

Akira Kouchiyama, Kanagawa, JP;

Mayumi Ogasawara, Miyagai, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); G11C 11/16 (2013.01); G11C 13/0011 (2013.01); H01L 27/2436 (2013.01); H01L 27/2472 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/1633 (2013.01);
Abstract

A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.


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