The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 20, 2012
Masayuki Shimuta, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Kazuhiro Ohba, Miyagi, JP;
Katsuhisa Aratani, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Kazuhiro Ohba, Miyagi, JP;
Katsuhisa Aratani, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.