The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Jun. 02, 2012
Applicants:

Tetsuya Mizuguchi, Kanagawa, JP;

Shuichiro Yasuda, Kanagawa, JP;

Masayuki Shimuta, Kanagawa, JP;

Kazuhiro Ohba, Miyagi, JP;

Katsuhisa Aratani, Kanagawa, JP;

Inventors:

Tetsuya Mizuguchi, Kanagawa, JP;

Shuichiro Yasuda, Kanagawa, JP;

Masayuki Shimuta, Kanagawa, JP;

Kazuhiro Ohba, Miyagi, JP;

Katsuhisa Aratani, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5614 (2013.01); H01L 45/146 (2013.01); H01L 45/08 (2013.01); H01L 45/145 (2013.01); H01L 45/144 (2013.01); H01L 45/085 (2013.01); H01L 45/1641 (2013.01); H01L 45/1266 (2013.01); H01L 45/1233 (2013.01); H01L 27/2472 (2013.01); G11C 2213/56 (2013.01); H01L 27/2436 (2013.01); G11C 13/011 (2013.01);
Abstract

A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer.


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