The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Feb. 23, 2012
Tetsuya Mizuguchi, Kanagawa, JP;
Kazuhiro Ohba, Miyagi, JP;
Shuichiro Yasuda, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Akira Kouchiyama, Kanagawa, JP;
Hiroaki Sei, Kanagawa, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Kazuhiro Ohba, Miyagi, JP;
Shuichiro Yasuda, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Akira Kouchiyama, Kanagawa, JP;
Hiroaki Sei, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less.