The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Sep. 16, 2013
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Shuichiro Yasuda, Kanagawa, JP;
Hiroaki Sei, Kanagawa, JP;
Akira Kouchiyama, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Naomi Yamada, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); H01L 27/2436 (2013.01); H01L 27/2472 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/141 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); G11C 13/0007 (2013.01);
Abstract
A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes.