The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Jun. 20, 2012
Kazuhiro Ohba, Miyagi, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Katsuhisa Aratani, Kanagawa, JP;
Kazuhiro Ohba, Miyagi, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Shuichiro Yasuda, Kanagawa, JP;
Masayuki Shimuta, Kanagawa, JP;
Katsuhisa Aratani, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.