Kanagawa, Japan

Masayuki Furumiya

This inventor holds 54 USPTO granted patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Renesas Electronics Corporation, Nec Electronics Corporation, Nec Corporation. Active years: 1994-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masayuki Furumiya. Retrieved from https://idiyas.com/inventor/masayuki-furumiya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 70.4

Average Co-Inventor Count = 2.0

ph-index = 9

Forward Citations = 308(Granted Patents)

Forward Citations (Not Self Cited) = 299(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tokyo, JP (1994 - 2004)
  • Kanagawa, JP (2005 - 2014)
  • Kawasaki, JP (2010 - 2015)

Company Filing History:


Years Active: 1994-2015

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Areas of Expertise:
Semiconductor Device
Integrated Circuit
Capacitor
Solid-State Image Sensor
Inductor
SOI Substrate
Wiring Layer
Electrode Pad
Metal-Insulator-Metal
High Frequency
Decoupling Capacitor
Image Sensing
54 patents (USPTO):Explore Patents

Title: Masayuki Furumiya: A Pioneering Innovator in Semiconductor Technology

Introduction: Masayuki Furumiya, based in Kanagawa, Japan, is a prominent inventor in the field of semiconductor technology with an impressive portfolio of 54 patents. His work has significantly contributed to advancements in electronic devices, showcasing his expertise and innovation.

Latest Patents: Among Masayuki's latest inventions is a pioneering semiconductor device that features a first substrate with a main surface and a rear surface that opposes the main surface. This device includes a first circuit composed of several transistors, covered by a first insulating film. Notably, it incorporates a first inductor in the first insulating film, which is electrically connected to the first circuit. Furthermore, a bonding pad is positioned over the main surface, distinctly located from the first inductor area, which forms an innovative approach to circuit design. Another significant patent involves a semiconductor device with a transistor region that utilizes a first conductor pattern within a multilayer interconnect structure. This pattern is strategically positioned beneath a signal line and above the transistor region, enhancing the device's performance by coupling it to ground or a power supply.

Career Highlights: Furumiya has made remarkable contributions while working at renowned companies such as Renesas Electronics Corporation and NEC Electronics Corporation. His extensive experience in these firms has allowed him to innovate and refine technology that is integral to modern electronic devices.

Collaborations: Throughout his career, Masayuki has collaborated with notable professionals in the field, including Yasutaka Nakashiba and Ryota Yamamoto. These partnerships have likely fostered a rich exchange of ideas and innovations, further pushing the boundaries of semiconductor technology.

Conclusion: Masayuki Furumiya stands out as a leading figure in the semiconductor industry, with his multiple patents reflecting his commitment to innovation and excellence. His contributions not only enhance the capabilities of electronic devices but also inspire the next generation of inventors and engineers in Kanagawa and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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