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For the Inventor, By the Inventor

Yokosuka, Japan

Masakazu Kobayashi

This inventor holds 63 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology (CPC class 1362). Top assignees: Tokyo Ohka Kogyo Co., Ltd., Nissan Motor Company Limited, Ngk Insulators, Inc.. Active years: 1989-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masakazu Kobayashi. Retrieved from https://idiyas.com/inventor/masakazu-kobayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 63

% Patents Active = 87.3


Average Co-Inventor Count = 3.5

ph-index = 19

Forward Citations = 1,154(Granted Patents)

Forward Citations (Not Self Cited) = 1,133(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Omiya, JP (1991)
  • Yokohama, JP (1997 - 1999)
  • Saitama, JP (1989 - 2001)
  • Hiratsuka, JP (2001)
  • Chigasaki, JP (1994 - 2003)
  • Kanagawa-ken, JP (1997 - 2003)
  • Arakawa-machi, JP (2003)
  • Nerima-ku, Tokyo, JP (2008)
  • Kawasaki, JP (1989 - 2010)
  • Kanagawa, JP (1998 - 2010)
  • Atsugi, JP (2012)
  • Yokosuka, JP (1997 - 2014)
  • Himeji Hyogo, JP (2022)

Company Filing History:

goldMedal30 out of 1,236 
 
Tokyo Ohka Kogyo Co., Ltd.
 patents
silverMedal14 out of 13,420 
 
Nissan Motor Company Limited
 patents
bronzeMedal7 out of 5,075 
 
Ngk Insulators, Inc.
 patents
4. 4 out of 39,374 
 
Fujitsu Corporation
 patents
5. 2 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
6. 2 out of 26 
 
Kanto Seiki Co., Ltd.
 patents
7. 2 out of 142 
 
Komatsu Electronic Metals Co., Ltd.
 patents
8. 1 out of 44 
 
Nippon Columbia Co., Ltd.
 patents
9. 1 out of 1,335 
 
Nippon Shokubai Co., Ltd.
 patents
10. 1 out of 6,021 
 
Rohm Co., Ltd.
 patents
11. 1 out of 1,703 
 
Toshiba Electronic Devices & Storage Corporation
 patents
12. 6 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1989-2022

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Areas of Expertise:
Semiconductor Device
Lithium-Ion Battery
Thermoelectric Module
Schottky Barrier Diode
Electric Motor Structure
Photoresist Stripping
Integrated Drive Motor
Substrate Treatment
Anti-Reflection Coating
Electric Vehicle
Single Crystal Production
Cooling Method
63 patents (USPTO):Explore Patents
1. 11502205 - Semiconductor device having Schottky barrier diode (2022-11-15),
2. 8663832 - Cell for reducing short circuit and battery incorporating the cell (2014-03-04),
3. 8309249 - Lithium-ion secondary battery (2012-11-13),
4. 7802516 - Screen printing method and apparatus including two squeegees with different lengths and pressures (2010-09-28),
5. 7775060 - Drive unit for electric vehicle (2010-08-17),
6. 7469457 - Method of removing integrated circuit chip package and detachment jig therefor (2008-12-30),
7. 7407894 - Compound semiconductor particles and production process therefor (2008-08-05),
8. 7088021 - Electric motor structure (2006-08-08),
9. 7030526 - Integrated drive motor/differential/inverter unit with improved housing for a vehicle (2006-04-18),
10. 6815151 - Rinsing solution for lithography and method for processing substrate with the use of the same (2004-11-09),
11. 6707180 - Cooling method and structure for a rotation object (2004-03-16),
12. 6638899 - Photoresist stripping solution and a method of stripping photoresists with the same (2003-10-28),
13. 6584279 - Heater sealed with carbon wire heating element (2003-06-24),
14. 6544717 - Undercoating composition for photolithographic resist (2003-04-08),
15. 6544712 - Negative working resist composition (2003-04-08),

Title: Innovator Masakazu Kobayashi: A Leading Force in Semiconductor Technology

Introduction

Masakazu Kobayashi, based in Yokosuka, Japan, is a prolific inventor known for his contributions to semiconductor technology. With an impressive portfolio of 63 patents, Kobayashi's work presents significant advancements in various electronic components that drive modern technology.

Latest Patents

Among his latest innovations is a semiconductor device featuring a Schottky barrier diode. This device comprises first and second electrodes with a semiconductor layer situated in between. The semiconductor layer includes several regions with distinct conductivity types that enhance the device's operational efficiency. Another notable patent is a cell designed to reduce short circuits, which involves a power-generating element along with an innovative outer package. This design ensures that when a short circuit occurs, heat generated by the current will cause the shorted portions of the collectors to fuse before reaching critical temperatures, thus preventing damage to the cell.

Career Highlights

Kobayashi has held significant roles in reputable companies, including Tokyo Ohka Kogyo Co., Ltd. and Nissan Motor Company Limited. Throughout his career, he has focused on developing technologies that advance electronic and battery designs, contributing to improvements in efficiency and reliability in these fields.

Collaborations

Working alongside esteemed colleagues such as Toshimasa Nakayama and Kazumasa Wakiya, Kobayashi has been part of collaborative efforts that amplify innovation in semiconductor devices and energy storage systems. His partnerships with these experienced professionals have spurred numerous breakthroughs during his career.

Conclusion

Masakazu Kobayashi stands as a prominent figure in the realm of semiconductor technologies, with his numerous patents showcasing his innovative spirit and dedication. As the field of technology continues to evolve, his contributions will undoubtedly leave a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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