Masakazu Katsuno

Title: Masakazu Katsuno: Innovator in Silicon Carbide Technology

Introduction

Masakazu Katsuno is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of silicon carbide technology. With a total of 12 patents to his name, he has made remarkable advancements in the production of silicon carbide single crystals and substrates.

Latest Patents

Katsuno's latest patents include a method for producing silicon carbide single crystals and a silicon carbide single crystal substrate. The first patent provides a method that enables the production of an SiC single crystal substrate with a reduced screw dislocation region over a wide area. This innovative method involves a growth sub-step that utilizes a higher nitrogen concentration and specific temperature and pressure conditions. The second patent focuses on a silicon carbide single crystal substrate cut from a bulk single crystal grown by the Physical Vapor Transport method. This substrate is characterized by a reduced number of screw dislocations in one semicircle area compared to the other, enhancing its quality and performance.

Career Highlights

Throughout his career, Katsuno has worked with notable companies such as Nippon Steel & Sumitomo Metal Corporation and Nippon Steel Corporation. His experience in these organizations has contributed to his expertise in materials science and engineering, particularly in the development of silicon carbide technologies.

Collaborations

Katsuno has collaborated with esteemed colleagues, including Tatsuo Fujimoto and Hiroshi Tsuge. These partnerships have fostered innovation and have been instrumental in advancing research in silicon carbide applications.

Conclusion

Masakazu Katsuno's work in silicon carbide technology has positioned him as a leading inventor in this field. His patents reflect a commitment to improving the quality and efficiency of silicon carbide substrates, which are crucial for various industrial applications.