The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Dec. 01, 2009
Tatsuo Fujimoto, Tokyo, JP;
Noboru Ohtani, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Noboru Ohtani, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
Abstract
The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.