The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
May. 10, 2011
Takashi Aigo, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Taizo Hoshino, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
Takashi Aigo, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Taizo Hoshino, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
Nippon Steel & Sumitomo Metal Corporation, Tokyo, JP;
Abstract
Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.