Tokyo, Japan

Takashi Aigo

USPTO Granted Patents = 9 

 

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2014-2021

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9 patents (USPTO):

Title: Takashi Aigo: Innovator in Silicon Carbide Technology

Introduction

Takashi Aigo is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of silicon carbide technology. With a total of nine patents to his name, Aigo has made remarkable advancements in the production of high-quality silicon carbide single crystal wafers.

Latest Patents

One of Aigo's latest patents focuses on the development of an epitaxial silicon carbide single crystal wafer and the process for producing it. This innovation features a wafer with a small depth of shallow pits and a high-quality silicon carbide single crystal thin film. The production method involves forming a buffer layer made of a silicon carbide epitaxial film, with a thickness ranging from 1 μm to 10 μm. By adjusting the carbon to silicon (C/Si) ratio in the gas used during the process, Aigo's method ensures that the depth of shallow pits on the surface of the drift layer is maintained at 30 nm or less.

Career Highlights

Throughout his career, Takashi Aigo has worked with notable companies such as Showa Denko K.K. and Nippon Steel & Sumitomo Metal Corporation. His experience in these organizations has contributed to his expertise in silicon carbide technology and its applications.

Collaborations

Aigo has collaborated with esteemed colleagues, including Tatsuo Fujimoto and Wataru Ito, further enhancing his innovative work in the field.

Conclusion

Takashi Aigo's contributions to silicon carbide technology through his patents and collaborations highlight his role as a leading inventor in this specialized area. His work continues to influence advancements in materials science and semiconductor technology.

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