The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jul. 16, 2015
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); C30B 25/14 (2006.01); C30B 29/36 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); C30B 25/16 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/20 (2013.01); H01L 21/205 (2013.01);
Abstract
The object is to produce with good reproducibility an epitaxial silicon carbide wafer having a high quality silicon carbide single crystal thin film with little step bunching. To achieve this object, for etching the silicon carbide single crystal substrate in the epitaxial growth furnace, hydrogen carrier gas and silicon-based material gas are used. After the etching treatment is finished as well, the epitaxial growth conditions are changed in the state in the state supplying these gases. When the conditions stabilize, a carbon-based material gas is introduced for epitaxial growth.