The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Apr. 07, 2011
Takashi Aigo, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Taizo Hoshino, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
Takashi Aigo, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Taizo Hoshino, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
Abstract
Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T) and a set growth temperature (T) which are respectively lower and higher than a growth temperature (T) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.