Tokyo, Japan

Hiroshi Tsuge

USPTO Granted Patents = 12 

 

Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2011-2020

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12 patents (USPTO):Explore Patents

Title: The Innovative Mind of Hiroshi Tsuge

Introduction

Hiroshi Tsuge is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of silicon carbide (SiC) technology. With a remarkable portfolio of 12 patents, Tsuge has paved the way for advancements in semiconductor materials and their applications.

Latest Patents

Tsuge’s latest innovations focus on the production of silicon carbide single crystals and substrates. One of his notable patents is a method for producing an SiC single crystal that ensures a screw dislocation-reduced region across a wide area. This method involves using a seed crystal with an off angle from the {0001} plane, allowing for optimal crystal growth under specific conditions. Another of his significant patents is for a silicon carbide single crystal substrate that is cut from a bulk single crystal grown using the Physical Vapor Transport method. This substrate boasts a reduced number of screw dislocations in specific areas, demonstrating significant improvements in material quality.

Career Highlights

Throughout his career, Hiroshi Tsuge has made substantial advancements in the field of material science. He has worked with esteemed companies such as Nippon Steel & Sumitomo Metal Corporation and Showa Denko K.K., where he honed his skills and contributed to research and development in semiconductor technologies.

Collaborations

In his journey as an inventor, Tsuge has collaborated with talented professionals, notably Tatsuo Fujimoto and Masakazu Katsuno. These partnerships have fostered innovation and shared knowledge within the industry, enhancing the development of cutting-edge technologies.

Conclusion

Hiroshi Tsuge's work in silicon carbide technology not only showcases his inventive prowess but also contributes meaningfully to advancements in semiconductor applications. His patents exemplify a commitment to innovation that continues to push the boundaries of material science, promising a brighter future for various technological applications.

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