The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Jan. 14, 2009
Noboru Ohtani, Sanda, JP;
Masakazu Katsuno, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Noboru Ohtani, Sanda, JP;
Masakazu Katsuno, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×10cmto 6×10cmand acceptor-type impurity at a concentration of 1×10cmto 5.99×10cmand wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×10cmto 5.99×10cm, and a substrate and epitaxial wafer obtained therefrom.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile