The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Apr. 01, 2009
Masashi Nakabayashi, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Noboru Ohtani, Sanda, JP;
Masashi Nakabayashi, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Noboru Ohtani, Sanda, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
Abstract
The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.