The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
May. 20, 2009
Tatsuo Fujimoto, Tokyo, JP;
Kohei Tatsumi, Tokyo, JP;
Taizo Hoshino, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Noboru Ohtani, Sanda, JP;
Masashi Nakabayashi, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Housei Hirano, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Kohei Tatsumi, Tokyo, JP;
Taizo Hoshino, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Noboru Ohtani, Sanda, JP;
Masashi Nakabayashi, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Housei Hirano, Tokyo, JP;
Hirokatsu Yashiro, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm.