The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Oct. 14, 2009
Masashi Nakabayashi, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Tatsuo Fujimoto, Tokyo, JP;
Masakazu Katsuno, Tokyo, JP;
Hiroshi Tsuge, Tokyo, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Chiyoda-Ku, Tokyo, JP;
Abstract
A single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality are disclosed that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×10cmto 6×10cm.