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For the Inventor, By the Inventor

Fukushima, Japan

Masahiro Sakurada

This inventor holds 30 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Silicon Crystal Production. Top assignees: Shin-Etsu Handotai Co., Ltd., Shin-Etsu Quartz Co., Ltd., Shin-Etsu Quartz Products Co., Ltd.. Active years: 1997-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiro Sakurada. Retrieved from https://idiyas.com/inventor/masahiro-sakurada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 93.3


Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 165(Granted Patents)


Location History:

  • Kouriyama, JP (1998 - 1999)
  • Koriyama, JP (1999)
  • Tokyo, JP (2001)
  • Fukushima-ken, JP (1997 - 2002)
  • Nishishirakawa-gun, JP (2003)
  • Fukushima, JP (2005 - 2012)
  • Annaka, JP (2016 - 2022)

Company Filing History:

goldMedal30 out of 1,099 
 
Shin-Etsu Handotai Co., Ltd.
 patents
silverMedal1 out of 7 
 
Shin-Etsu Quartz Co., Ltd.
 patents
bronzeMedal1 out of 99 
 
Shin-Etsu Quartz Products Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1997-2022

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Areas of Expertise:
Silicon Wafer
Single Crystal
Epitaxial Wafer
Czochralski Method
SOI Wafer
Defect Density
Graphite Heater
Silicon Monocrystal
Manufacturing Method
Silicon Epitaxial
P-Doped Silicon
Fused Silica Glass
30 patents (USPTO):Explore Patents
1. 11486833 - Method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and method for manufacturing thereof (2022-11-01),
2. 10355092 - Silicon epitaxial wafer and method of producing silicon epitaxial wafer (2019-07-16),
3. 9938634 - Method of producing silicon single crystal (2018-04-10),
4. 9425345 - Epitaxial wafer and manufacturing method thereof (2016-08-23),
5. 8147611 - Method of manufacturing single crystal (2012-04-03),
6. 7518187 - Soi wafer and a method for producing the same (2009-04-14),
7. 7407866 - Soi wafer and a method for producing the same (2008-08-05),
8. 7384477 - Method for producing a single crystal and a single crystal (2008-06-10),
9. 7323048 - Method for producing a single crystal and a single crystal (2008-01-29),
10. 7311888 - Annealed wafer and method for manufacturing the same (2007-12-25),
11. 7294196 - Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal (2007-11-13),
12. 7258744 - Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal (2007-08-21),
13. 7226507 - Method for producing single crystal and single crystal (2007-06-05),
14. 7214268 - Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer (2007-05-08),
15. 7129123 - SOI wafer and a method for producing an SOI wafer (2006-10-31),

Title: Masahiro Sakurada - Innovator from Fukushima

Introduction: Masahiro Sakurada is a renowned inventor hailing from Fukushima, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Masahiro Sakurada holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Masahiro Sakurada has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Masahiro Sakurada has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Masahiro Sakurada's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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