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For the Inventor, By the Inventor

Fukushima, Japan

Masahiro Sakurada

USPTO Granted Patents = 30 


Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 165(Granted Patents)


Location History:

  • Kouriyama, JP (1998 - 1999)
  • Koriyama, JP (1999)
  • Tokyo, JP (2001)
  • Fukushima-ken, JP (1997 - 2002)
  • Nishishirakawa-gun, JP (2003)
  • Fukushima, JP (2005 - 2012)
  • Annaka, JP (2016 - 2022)

Company Filing History:

goldMedal30 out of 1,099 
 
Shin-etsu Handotai Co., Ltd.
 patents
silverMedal1 out of 99 
 
Shin-etsu Quartz Products Co., Ltd.
 patents
bronzeMedal1 out of 7 
 
Shin-etsu Quartz Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1997-2022

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30 patents (USPTO):Explore Patents
1. 11486833 - Method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and method for manufacturing thereof (2022-11-01),
2. 10355092 - Silicon epitaxial wafer and method of producing silicon epitaxial wafer (2019-07-16),
3. 9938634 - Method of producing silicon single crystal (2018-04-10),
4. 9425345 - Epitaxial wafer and manufacturing method thereof (2016-08-23),
5. 8147611 - Method of manufacturing single crystal (2012-04-03),
6. 7518187 - Soi wafer and a method for producing the same (2009-04-14),
7. 7407866 - Soi wafer and a method for producing the same (2008-08-05),
8. 7384477 - Method for producing a single crystal and a single crystal (2008-06-10),
9. 7323048 - Method for producing a single crystal and a single crystal (2008-01-29),
10. 7311888 - Annealed wafer and method for manufacturing the same (2007-12-25),
11. 7294196 - Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal (2007-11-13),
12. 7258744 - Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal (2007-08-21),
13. 7226507 - Method for producing single crystal and single crystal (2007-06-05),
14. 7214268 - Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer (2007-05-08),
15. 7129123 - SOI wafer and a method for producing an SOI wafer (2006-10-31),

Title: Masahiro Sakurada - Innovator from Fukushima

Introduction: Masahiro Sakurada is a renowned inventor hailing from Fukushima, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Masahiro Sakurada holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Masahiro Sakurada has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Masahiro Sakurada has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Masahiro Sakurada's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

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