The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
May. 08, 2014
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Masahiro Sakurada, Annaka, JP;
Junya Tokue, Iwaki, JP;
Ryoji Hoshi, Nishigo-mura, JP;
Izumi Fusegawa, Nishigo-mura, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×10atoms/cmor more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×10atoms/cm(ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×10atoms/cm(ASTM'79) or more.