Nishigo-mura, Japan

Ryoji Hoshi

USPTO Granted Patents = 37 


Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 85(Granted Patents)


Location History:

  • Gunma, JP (1994)
  • Annaka, JP (1997)
  • Fukushima-ken, JP (1997 - 2000)
  • Nishishirakawa-gun, JP (2003)
  • Fukushima, JP (2003 - 2012)
  • Nishishirakawa, JP (2011 - 2016)
  • Nishigo-mura, JP (2010 - 2024)

Company Filing History:


Years Active: 1994-2024

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37 patents (USPTO):Explore Patents

Title: Innovations in Silicon Crystal Production: The Contributions of Ryoji Hoshi

Introduction

Ryoji Hoshi, a notable inventor based in Nishigo-mura, Japan, has made significant strides in the field of semiconductor technology. Holding an impressive portfolio of 37 patents, Hoshi's work primarily focuses on methods for producing silicon single crystals, which are pivotal in the electronics industry.

Latest Patents

Among his recent innovations, Hoshi's patents include a pioneering method for producing a silicon single crystal that is doped with nitrogen while controlling the carbon impurities. This process involves introducing a silicon nitride powder into the raw material before melting, allowing for nitrogen doping at a lower cost and maintaining low carbon concentration. Another significant patent outlines a method that incorporates a magnetic field during the Czochralski process to produce a silicon single crystal with a favorable macroscopic RRG distribution. This innovation not only enhances the quality of the silicon produced but also addresses important parameters such as diameter and growth axis direction.

Career Highlights

Ryoji Hoshi has dedicated his career to advancing semiconductor manufacturing techniques. He is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the production of silicon wafers, where he continues to innovate in crystal growth methodologies. His contributions have been critical in meeting the growing demands of the electronics sector.

Collaborations

Throughout his career, Hoshi has collaborated with esteemed colleagues, including Izumi Fusegawa and Tomohiko Ohta. These partnerships have fostered an environment of creativity and technical excellence, leading to groundbreaking advancements in silicon crystal production.

Conclusion

Ryoji Hoshi's contributions to the field of semiconductor technology, particularly in the production of silicon single crystals, have set new benchmarks for quality and efficiency. With his innovative methods and collaborative spirit, Hoshi plays a vital role in shaping the future of electronics, ensuring that high-quality materials are available to meet evolving technological needs.

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