The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Feb. 15, 2013
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
The present invention provides a method for manufacturing a silicon single crystal wafer, wherein, under a growth condition that V/G≧1.05×(V/G)crt is achieved where V is a growth rate in growth of the silicon single crystal ingot, G is a temperature gradient near a crystal growth interface, and (V/G)crt is a value of V/G when a dominant point defect changes from a vacancy to interstitial Si, a silicon single crystal ingot having oxygen concentration of 7×10atoms/cm(ASTM'79) or less is grown, and a silicon single crystal wafer which includes a region where the vacancy is dominant and in which FPDs are not detected by preferential etching is manufactured from the grown silicon single crystal ingot. As a result, there is provided the method that enables manufacturing a low-oxygen concentration silicon single crystal wafer that can be preferably used for a power device with good productivity at a low cost.