The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Aug. 26, 2013
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Ryoji Hoshi, Nishigo-mura, JP;
Kosei Sugawara, Nishigo-mura, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A silicon single crystal growing apparatus based on a Czochralski method arranges a graphite crucible inside a graphite heater for heating and a quartz crucible inside the graphite crucible and grows a crystal from a raw material melt filling the quartz crucible, and includes a heater outer heat-insulating member outside the graphite heater, a crucible lower heat-insulating member below the graphite crucible, a crucible upper heat-insulating member above straight bodies of the graphite and quartz crucibles, a crucible outer heat-insulating member outside the straight body of the graphite crucible, a crucible inner heat-insulating member inside the straight bodies of the graphite crucible and the quartz crucible, and a heat shielding member above a liquid surface of the raw material melt, the graphite crucible and the quartz crucible being movable upward and downward in a space enclosed with the crucible upper heat-insulating, crucible outer heat-insulating, and crucible inner heat-insulating members.