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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9425345 B1

PDFFull Text
Date of Patent:
Aug. 23, 2016

Filed:

Oct. 02, 2012

Epitaxial wafer and manufacturing method thereof

Applicant:

Shin-etsu Handotai Co., Ltd., Tokyo, JP;

Inventors:

Ryoji Hoshi, Nishigo-mura, JP;

Masahiro Sakurada, Annaka, JP;

Izumi Fusegawa, Nishigo-mura, JP;

Assignee:

SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Telly Green

Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 31/18 (2006.01); H01L 27/148 (2006.01); C30B 15/20 (2006.01); H01L 27/146 (2006.01); H01L 29/36 (2006.01); H01L 31/0288 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); C30B 15/00 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01); H01L 21/0257 (2013.01); H01L 21/02532 (2013.01); H01L 21/3225 (2013.01); H01L 27/14687 (2013.01); H01L 27/14843 (2013.01); H01L 29/36 (2013.01); H01L 31/0288 (2013.01); H01L 21/02381 (2013.01); H01L 21/02576 (2013.01); H01L 21/02658 (2013.01);
Abstract

A method for manufacturing an epitaxial wafer for manufacture of an image pickup device, wherein, before the growth of the epitaxial layer, a thickness X of a region where oxygen concentration in the epitaxial layer becomes 4×10atoms/cmor more after the manufacture of the image pickup device is calculated and, in the growth of the epitaxial layer, the epitaxial layer is grown with a thickness such that a thickness of a region where the oxygen concentration in the epitaxial layer is less than 4×10atoms/cmafter the manufacture of the image pickup device is 6 μm or more in addition to the thickness X. As a result, it is possible to provide the epitaxial wafer in which an adverse effect of an impurity such as oxygen in the silicon wafer is not exerted on an image pickup device forming portion of the epitaxial layer and a manufacturing method thereof.

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